HVD135 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

HVD135

Silicon Epitaxial Trench Pin Diode for Antenna Switching

Hitachi -> Renesas Electronics 

HVD135

Absolute Maximum Ratings

(Ta = 25°C)

Item

Peak reverse voltage

Reverse voltage

Forward current

Power dissipation

Junction temperature

Storage temperature

Symbol

V

RM

V

R

IF

Pd

Tj

Tstg

Value

Unit

65

V

60

V

100

mA

150

mW

125

°C

−55 to +125

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol Min Typ Max Unit Test Condition

Reverse current

IR

Forward voltage

VF

Capacitance

C

Forward resistance rf

ESD-Capability *1 —

——

——

——

——

100 —

0.1 µA

0.9 V

0.6 pF

2.0 Ω

—V

VR = 60 V

IF = 2 mA

VR = 1 V, f = 1 MHz

IF = 2 mA, f = 100 MHz

C = 200 pF, R = 0 Ω, Both forward and

reverse direction 1 pulse.

Notes : 1. Failure criterion ; IR > 100 nA at VR = 60 V

2. Please do not use the soldering iron due to avoid high stress to the SFP package.

Rev.0, Jul. 2000, page 2 of 6

Share Link: