MURS360B Ver la hoja de datos (PDF) - WeEn Semiconductors
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MURS360B Datasheet PDF : 10 Pages
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WeEn Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol Parameter
Static characteristics
VF
forward current
IR
reverse current
Dynamic characteristics
Qr
reverse charge
trr
reverse recovery time
IRM
peak reverse recovery
current
Eas
non-repetitive
avalanche energy
Conditions
IF = 3 A; Tj = 25 °C; Fig. 6
IF = 3 A; Tj = 150 °C; Fig. 6
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs;
Tj = 125 °C; Fig. 7
IF = 1 A; VR = 30 V; dIF/dt = 50 A/μs;
Tj = 25 °C; Fig. 7
IF = 0.5 A; IR = 1 A; IR(meas) = 0.25 A;
Tj = 25 °C; Step recovery
IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs;
Tj = 125 °C; Fig. 7
IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs;
Tj = 25 °C; Fig. 7
IF = 3 A; VR = 400 V; dIF/dt = 200 A/μs;
Tj = 125 °C; Fig. 7
IR = 1.2 A; Tj(init) = 25 °C; L = 15 mH
MURS360B
Ultrafast power diode
Min Typ Max Unit
-
-
1.3 V
-
0.88 1.05 V
-
-
3
μA
-
-
1
mA
-
122 -
nC
-
199 -
nC
-
50
-
ns
-
-
50
ns
-
52
-
ns
-
65
-
ns
-
4.7
-
A
-
6.1
-
A
10.8 -
-
mJ
10
IF
(A)
8
axc18-006
IF
dlF
dt
trr
6
(1) (2) (3)
4
time
25 %
Qr
100 %
2
0
0
0.5
1
1.5
2
VF (V)
Vo = 0.803 V; Rs = 0.0647 Ω
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 6. Forward current as a function of forward voltage
IR
IRM
003aac562
Fig. 7. Reverse recovery definitions; ramp recovery
MURS360B
Product data sheet
All information provided in this document is subject to legal disclaimers.
1 August 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
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