DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

R2A20114FP Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza
componentes Descripción
Fabricante
R2A20114FP Datasheet PDF : 12 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
R2A20114 Series
Preliminary
Electrical Characteristics (cont.)
(Ta = 25°C, VCC = 12 V, CT = 1000 pF, RT = 27 k, CS1, CS2 = GND, IRAMP = 10 k, BO = 1 V, VAC = 0 V,
RS = 220 k, FMC = GND (*1), FM = GND (*2), FB = COMP)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Synchroni-
zation
SYNC threshold voltage
(rising)
Vsync
2.0
2.5
3.0
V
SYNC Min. pulse
Psync
2
s
SYNC-OUT shunt current
(*1)
Isync-s
5.0
mA
SYNC-OUT leakage current
(*1)
Isync-l
1.0
A
Current
slope
RS output voltage 1
RS output voltage 2
Vrs1
Vrs2
0.56
0.65
0.74
0.04
0.14
0.26
V
VAC = 0 V, VFB = 2.5 V
V
VAC = 2.5 V, VFB = 0 V
VAC bias current
Ivac
–0.4
–0.2 –0.05
A Measured pin: VAC
Soft start
Source current
Iss
–40
–28
–16
A SS = 2 V
Phase drop
AMP1, 2
Phase drop threshold
voltage (*1)
Phase drop hysteresis (*1)
PD bias current (*1)
CSO offset voltage1 (*5)
CSO offset voltage1 (*6)
CSO offset voltage2
CS Bias current (*5)
CS Bias current (*6)
Vpd
Hya-pd
Ipd
Voffset
Voffset
Vcaoh
Ics-r
Ics-ct
2.4
2.5
2.6
V
150
200
250
mV
0.05
0.2
0.5
A Measured pin: PD
0.68
0.88
1.0
V
Vcs = 0 V
0.54
0.74
0.86
2.83
3
3.17
V
Vcs = 0 V
V
Vcs = 0.24 V (*5),
Vcs = 2.3 V (*6)
–0.4
–0.2 –0.05
A Measured pin: CS1, 2
–1.1
–0.8
–0.5
A Measured pin: CS1, 2
Gate drive
1, 2
Gate drive rise time
Gate drive fall time
tr-gd
tf-gd
30
100
ns
CL = 500 pF
30
100
ns
CL = 500 pF
Gate drive low voltage
Vol1-gd
0.05
0.2
V
Isink = 10 mA
Vol2-gd
1
1.25
V
Isink = 0.25 mA, VCC = 5 V
Gate drive high voltage
Voh-gd
11.5
11.9
V
Isource = –10 mA
Minimum duty cycle
Dmin-out
0
%
Maximum duty cycle
Dmax-out
90
95
98
%
Over
voltage
protection
Dynamic OVP Threshold
voltage
Static OVP Threshold
voltage
Vdovp
Vsovp
VFB
1.025
VFB
1.065
VFB
1.040
VFB
1.080
VFB
1.055
VFB
1.095
V
V
COMP = OPEN
Static OVP Hysteresis
Hys-sovp
OVP2 Threshold voltage (*1) Vovp2
OVP2 Hysteresis (*1)
OVP2 Bias current (*1)
Hys-ovp2
Iovp2
30
VFB
1.065
30
–0.5
80
VFB
1.080
80
–0.3
130
VFB
1.095
130
–0.05
mV COMP = OPEN
A
mV COMP = OPEN
A Measured pin: OVP2
FB Open Detect Threshold
voltage
Vfbopen
0.45
0.5
0.55
V
Over
current
protection
FB Open Detect hysteresis
OCP Threshold voltage (*5)
OCP Threshold voltage (*6)
Delay to output
Vfbopen
VCL
VCL
td-CL
0.16
0.2
0.24
V
0.28
0.31
0.34
V
2.9
3
3.1
V
100
250
ns
Notes: *1 Applied to R2A20104FP, R2A20114FP
*2 Applied to R2A20104SP, R2A20114SP
*5 Applied to R2A20114FP, R2A20114SP
*6 Applied to R2A20104FP, R2A20104SP
R03DS0008EJ0100 Rev.1.00
Sep 03, 2010
Page 9 of 11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]