MCR8SDG Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
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Fabricante
MCR8SDG Datasheet PDF : 1 Pages
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isc Thyristors
MCR8SDG
DESCRIPTION
·With TO-220 packaging
·High surge capability
·Glass passivated junctions and center gate fire for greater
parameter uniformity and stability
·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS
·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM Repetitive peak off-state voltage
VRRM Repetitive peak reverse voltage
IT(RMS)
ITSM
PG(AV)
RMS on-state current @Tc=80℃
Surge non-repetitive on-state current
( 1/2 cycle,sine wave;Tj=110℃ )
Average gate power dissipation
Tj
Operating junction temperature
Tstg Storage temperature
Tp=8.3ms
60Hz
MIN
UNIT
400
V
400
V
8
A
80
A
0.5
W
-40~110 ℃
-40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VRM=VRRM
IDRM Repetitive peak off-state current VDM=VDRM
Tj=25℃
Tj=110℃
VTM On-state voltage
ITM= 16A
IGT
Gate-trigger current
VD = 12 V; RL=100Ω
VGT Gate-trigger voltage
VD = 12 V; RL=100Ω
Rth(j-c) Thermal resistance
Junction to case
MIN MAX UNIT
0.01
0.5
mA
1.8 V
0.2 mA
1.0 V
2.2 ℃/W
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