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MCR8SM Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.

Número de pieza
componentes Descripción
Fabricante
MCR8SM
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
MCR8SM Datasheet PDF : 5 Pages
1 2 3 4 5
MCR8SD, MCR8SM, MCR8SN
Voltage Current Characteristic of SCR
+ Current
Anode +
Symbol
VDRM
IDRM
VRRM
IRRM
VTM
IH
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
IRRM at VRRM
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode –
VTM
IH
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
110
105
100
95
90
85
dc
80
30° 60° 90° 120° 180°
75
0
1
2
3
4
5
6
7
8
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. Typical RMS Current Derating
15
dc
12
9
180°
90° 120°
6
60°
30°
3
0
0
1
2
3
4
5
6
7
8
IT(AV), AVERAGE ON–STATE CURRENT (AMPS)
Figure 2. On–State Power Dissipation
100
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 110°C
10
MAXIMUM @ TJ = 25°C
1
0.1
0.5 1.0
1.5
2.0
2.5
3.0
3.5
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
Figure 3. Typical On–State Characteristics
100
90
80
70
60
50
40
30
20
10
0
–40 –25 –10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 4. Typical Gate Trigger Current versus
Junction Temperature
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