MCR8SD Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
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MCR8SD Datasheet PDF : 5 Pages
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MCR8SD, MCR8SM, MCR8SN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
RθJC
RθJA
TL
Min
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current(1)
IDRM,
(VD = Rated VDRM and VRRM; RGK = 1 kΩ)
TJ = 25°C
IRRM
—
TJ = 110°C
—
ON CHARACTERISTICS
Peak Forward On–State Voltage* (ITM = 16 A)
Gate Trigger Current (Continuous dc)(2)
(VD = 12 V; RL = 100 Ω)
VTM
—
IGT
5.0
Holding Current(2)
(VD = 12 V, Gate Open, Initiating Current = 200 mA)
Latch Current(2)
(VD = 12 V, IG = 200 µA)
IH
—
IL
—
Gate Trigger Voltage (Continuous dc)(2)
(VD = 12 V; RL = 100 Ω)
* TJ = 25°C
TJ = 40°C
VGT
0.3
—
Gate Non–Trigger Voltage
(VD = 12 V, RL = 100 Ω)
TJ = 110°C
VGD
0.2
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
(VD = 67% VDRM, RGK = 1 KΩ, CGK = 0.1 µF, TJ = 110°C)
Critical Rate of Rise of On–State Current
IPK = 50 A, Pw = 40 µsec, diG/dt = 1 A/µsec, Igt = 10 mA
v v *Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(1) RGK = 1000 Ohms included in measurement.
(2) Does not include RGK in measurement.
dv/dt
5.0
di/dt
—
Value
2.2
62.5
260
Unit
°C/W
°C
Typ
Max
Unit
µA
—
10
—
500
—
1.8
Volts
25
200
µA
0.5
6.0
mA
0.6
8.0
mA
0.65
1.0
Volts
—
1.5
—
—
Volts
15
—
V/µs
—
100
A/µs
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