CY14B108L(2011) Ver la hoja de datos (PDF) - Cypress Semiconductor

Número de pieza

componentes Descripción

Fabricante

CY14B108L
(Rev.:2011)

8-Mbit (1024 K × 8/512 K × 16) nvSRAM

Cypress Semiconductor 

CY14B108L

CY14B108N

Data Retention and Endurance

Over the Operating Range

Parameter

DATAR

NVC

Data retention

Nonvolatile STORE operations

Description

Capacitance

Parameter[11]

Description

CIN

COUT

Input capacitance

Output capacitance

Test Conditions

TA = 25 C, f = 1 MHz, VCC = VCC(Typ)

Min

20

1,000

Unit

Years

K

Max

Unit

14

pF

14

pF

Thermal Resistance

Parameter[11]

Description

JA

Thermal resistance

(Junction to ambient)

JC

Thermal resistance

(Junction to case)

Test Conditions

Test conditions follow

standard test methods and

procedures for measuring

thermal impedance, in

accordance with

EIA/JESD51.

48-ball FBGA 44-pin TSOP II 54-pin TSOP II Unit

42.2

45.3

44.22

C/W

6.3

5.2

8.26

C/W

AC Test Loads

3.0 V

OUTPUT

30 pF

577 

R1

Figure 4. AC Test Loads

R2

789 

3.0 V

OUTPUT

5 pF

577 

R1

for tristate specs

R2

789 

AC Test Conditions

Input pulse levels ................................................... 0 V to 3 V

Input rise and fall times (10%–90%) ........................... < 3 ns

Input and output timing reference levels ...................... 1.5 V

Note

11. These parameters are guaranteed by design but not tested.

Document #: 001-45523 Rev. *J

Page 10 of 25

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