2N3019 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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2N3019 Datasheet PDF : 3 Pages
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2N3019
THERMAL DATA
nMhj-case
^thj-amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
30
r °c/w
Max
187.5
°c/w
ELECTRICAL CHARACTERISTICS (Tease = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO Collector Cut-off
Current (IE = 0)
VCB = 90 V
VCB = 90 V Tc = 150 °C
IEBO Emitter Cut-off Current VEB = 5 V
(lc = 0)
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
Ic = 100 uA
V(BR)CEO* Collector-Emitter
Breakdown Voltage
(le = 0)
Ic = 10 mA
V(BR)EBO Emitter-Base
Breakdown Voltage
(Ic = 0)
IE = 100 u.A
VcE(sal)* Collector-Emitter
Saturation Voltage
lc = 150 mA IB = 15 mA
Ic = 500 mA IB = 50 mA
VaE(sat)* Base-Emitter
Saturation Voltage
Ic = 150 mA IB = 15 mA
hFE* DC Current Gain
lc = 0.1 mA VCE = 10 V
Ic = 10 mA VCE = 10 V
l c = 150mA VCE = 10V
lc = 500 mA VCE = 10 V
|C=1A
VCE = 10V
lc= 150mA VCE = 10V
Tamb = -55°C
hfe* Small Signal Current l c = 1 mA VCE = 5 V f = 1 KHz
Gain
fr
Transition Frequency lc = 50 mA VCE = 10 V f = 20MHz
CCBO Collector-Base
Capacitance
IE = 0 VCB = 10V f=1MHz
CEBO Emitter-Base
Capacitance
|c = 0 VEB= 0.5 V f = 1 M H z
NF Noise Figure
lc = 0.1 mA VCE = 10 V
f = 1KHz R, = 1KO
rub Cb'c Feedback Time
Constant
l c = 10 mA VCE = 10 V
Pulsed: Pulse duration = 300 u,s, duty cycle < 1 %
f = 4MHz
Min.
140
80
7
50
90
100
50
15
40
80
100
Typ.
Max.
10
10
10
0.2
0.5
1.1
300
400
12
60
4
400
Unit
nA
uA
nA
V
V
V
V
V
V
MHz
pF
PF
dB
ps
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