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2N3019

SMALL SIGNAL NPN TRANSISTOR

New Jersey Semiconductor 

<Ss.ml-C.onau.ctoi

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2N3019

SMALL SIGNAL NPN TRANSISTOR

DESCRIPTION

The 2N3019 is a silicon Planar Epitaxial NPN

transistor in Jedec TO-39 metal case, designed

for high-current, high frequency amplifier

application. It feature high gain and low saturation

voltage.

INTERNAL SCHEMATIC DIAGRAM

TO-39

ABSOLUTE MAXIMUM RATINGS

Symbol

VCBO

VCEO

VEBO

Ic

Plot

Tstg

Tj

Parameter

Collector-Base Voltage (IE = 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (Ic = 0)

Collector Current

Total Dissipation at Tamb < 25 °C

at TC < 25 °C

Storage Temperature

Max. Operating Junction Temperature

Value

Unit

140

V

80

V

7

V

1

A

0.8

W

5

W

-65 to 175

°C

175

°C

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliableat the time of going

to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

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