VN2222LL Ver la hoja de datos (PDF) - Temic Semiconductors
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Fabricante
VN2222LL Datasheet PDF : 5 Pages
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VN10/0605/0610/2222 Series
Siliconix
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol VN10LEb VN10LM VN0605T VN0610LL VN2222LL VN2222LM Unit
DrainĆSource Voltage
GateĆSource Voltage
Continuous Drain
Current
(TJ = 150_C)
Pulsed Drain Currenta
Power Dissipation
TA= 25_C
TA= 100_C
TA= 25_C
TA= 100_C
Maximum JunctionĆtoĆAmbient
VDS
VGS
ID
IDM
PD
RthJA
60
"20
0.38
0.24
1.0
1.5
0.6
400
60
"30
0.32
0.2
1.4
1.0
0.4
125
60
"30
0.18
0.11
0.72
0.36
0.14
350
60
"30
0.28
0.17
1.3
0.8
0.32
156
60
"30
0.23
0.14
1.0
0.8
0.32
156
60
V
"30
0.26
0.16
A
1.0
1.0
W
0.4
125
_C/
W
Operating Junction and
Storage Temperature Range
TJ, Tstg
-55 to 150
_C
Notes
a. Pulse width limited by maximum junction temperature.
b. Reference case for all temperature testing.
Specificationsa
Parameter
Static
Symbol
DrainĆSource
Breakdown Voltage
GateĆThreshold Voltage
V(BR)DSS
VGS(th)
GateĆBody Leakage
IGSS
Zero GateĆVoltage
Drain Current
IDSS
OnĆState Drain Currentc
ID(on)
DrainĆSource
OnĆResistancec
rDS(on)
Forward
Transconductancec
gfs
Common Source
Output Conductancec
gos
Test Conditions
Limits
VN10LE
VN10LM
VN0610LL
VN2222LL
VN0605T VN2222LM
Typb Min Max Min Max Min Max Unit
VGS = 0 V, ID = 100 mA
VGS = 0 V, ID = 10 mA
VDS = VGS, ID = 1 mA
VDS = 0 V, VGS = "20 V
70 60
60
70
60
V
2.1 0.8 2.5 0.8 3.0 0.6 2.5
"100
e
"10
0
"10
0
TJ=125_C
"50
nA
0
VDS = 0 V, VGS = "30 V
"100
VDS = 50 V, VGS = 0 V
10
1.0
TJ= 125_C
VDS = 48 V, VGS = 0 V
500
500
mA
10
TJ= 125_C
500
VDS = 10 V, VGS = 10 V
1000 750
500
750
mA
VGS = 4.5 V, ID = 50 mA
4.5
7.5
VGS = 5 V, ID = 0.2 A
4.5
7.5
VGS = 10 V, ID = 0.5 A
2.4
5
7.5
W
5
7.5
TJ= 125_C 4.4
9
10
13.5
VDS = 10 V, ID = 0.5 A
VDS = 10 V, ID = 0.2 A
230 100
180
100
mS
80
VDS = 5 V, ID = 50 mA
500
ms
2
P-37993—Rev. C (08/08/94)
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