2SC5382 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC5382 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage IC=0.1A;IB=0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.6A
VsE(sal) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
ICEO
Collector Cutoff Current
VCE= 550V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 9V; I0= 0
hpE-1
DC Current Gain
hpE-2
DC Current Gain
|c= 3A; VCE= 5V
lc= 1mA;Vce=5V
Switching times
'on
Turn-on Time
tstg
Storage Time
tf
Fall Time
|C=3A,IB1=0.6A;IB2=-1.2A;
RL= 50 n ; VBB2=4V
2SC5382
MIN TYP. MAX UNIT
550
V
1.0
V
1.5
V
100
uA
100
uA
100
wA
10
10
1.3
us
4.0
us
0.3
PS
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