2SC5382 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SC5382 Datasheet PDF : 2 Pages
| |||
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC5382
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VcEo<susr 550V(Min)
• High Switching Speed
• Low Collector Saturation Voltage
APPLICATIONS
• Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
550
V
VEBO
Emitter-Base Voltage
9
V
Ic
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
12
A
IB
Base Current-Continuous
3
A
IBM
Base Current-Peak
Total Power Dissipation
PT
@ TC=25°C
Tj
Junction Temperature
Tstg
Storage Temperature Range
6
A
40
W
150
°C
-55-150
•c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Thermal Resistance.Junction to Case 3.13
°c/w
IP
'*'
;t
i
PIN 1.BASE
2. COLLECTOR
3. EMITTER
TO-220C package
- BH
-»
•» V «•) 1 -F
^efy
t
I 1 10.00'-
I H•'"
i1
soi"
K
f h«°
*
f
C
1
mm
DIN WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2.70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
y 8.66 8.86
Quality Semi-Conductors
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