DB157 Ver la hoja de datos (PDF) - Jiangsu High diode Semiconductor Co., Ltd
Número de pieza
componentes Descripción
Fabricante
DB157 Datasheet PDF : 3 Pages
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DB151 THRU DB157
HD DB60
DB Plastic-Encapsulate Bridge Rectifier
Features
●Io
1.5A
●VRRM
50V-1000V
DB
●High surge current capability
●Glass passivated chip
●Polarity: Color band denotes cathode
Applications
● General purpose 1 phase Bridge
rectifier applications
Marking
● DB15X
X : From 1 To 7
Item
Symbol Unit
Repetitive Peak Reverse
Voltage
Maximum RMS Voltage
VRRM
V
V RMS
V
Conditions
DB1
51 52 53 54 55 56 57
50 100 200 400 600 800 1000
35 70 140 280 420 560 700
Average Rectified Output
Current
IO
A
60Hz sine wave, R-load,Ta=25℃
1.5
Surge(Non-
repetitive)Forward Current
Current Squared Time
Storage Temperature
Junction Temperature
IFSM
A
60HZ sine wave, 1 cycle, Tj=25℃
I2t
A2S 1ms≤t<8.3ms Tj=25℃，Rating of per diode
Tstg
℃
Tj
℃
30
3.7
-55 ~+150
-55 ~+150
Electrical Characteristics（Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Peak Forward Voltage
Peak Reverse Current
Thermal Resistance
VFM
V
IFM=1.5A, Pulse measurement, Rating of per diode
IRRM μA VRM=VRRM , Pulse measurement, Rating of per diode
RθJ-A
RθJ-L
Between junction and ambient, On glass-epoxi substrate
℃/W
Between junction and lead
Max
1.1
10
68
15
High Diode Semiconductor
1
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