7N60ZL-X-TQ2-T Ver la hoja de datos (PDF) - Unisonic Technologies
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7N60ZL-X-TQ2-T Datasheet PDF : 6 Pages
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7N60Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
7N60Z-A
7N60Z-B
600
V
VDSS
650
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
7.4
A
Continuous Drain Current
ID
7.4
A
Pulsed Drain Current (Note 1)
IDM
29.6
A
Avalanche Energy
Single Pulsed (Note 3) EAS
Repetitive (Note 2)
EAR
600
mJ
14.2
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
Power Dissipation
TO-220/ TO-263
TO-220F/TO-220F1
PD
142
W
48
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 19.5mH, IAS = 7.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD ≤7.4A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C
THERMAL DATA
Junction to Ambient
Junction to Case
PARAMETER
TO-220/ TO-263
TO-220/ TO-263
SYMBOL
θJA
θJC
RATINGS
62.5
0.88
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
7N60Z-A
Drain-Source Breakdown Voltage
7N60Z-B
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current
IDSS
VDS = 600V, VGS = 0V
Gate- Source Leakage Current Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature Coefficient
△BVDSS/△TJ
ID = 250μA,
Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON) VGS = 10V, ID = 3.7A
DYNAMIC CHARACTERISTICS
600
V
650
V
1 μA
10 μA
-10 μA
0.67
V/°C
2.0
4.0 V
1Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1.0 MHz
1400 pF
180 pF
16 21 pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD(ON)
tR
tD(OFF)
tF
QG
QGS
QGD
VDD =300V, ID =7.4A, RG =25Ω
(Note 1, 2)
VDS=480V, ID=7.4A, VGS=10 V
(Note 1, 2)
70 ns
170 ns
140 ns
130 ns
29 38 nC
7
nC
14.5
nC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-349.B
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