2SC458 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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componentes Descripción

Fabricante

2SC458

Silicon NPN transistor in a TO-92 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SC458

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Emitter Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IE

PC

Tj

Tstg

DATA SHEET

数值

Rating

30

30

5.0

100

-100

200

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

符号

Symbol

VCBO

VCEO

VEBO

ICBO

IEBO

hFE

VCE(sat)

VBE

fT

Cob

Noise Figure

NF

Small Signal Input Impedance

hie

Small Signal Voltage Feedback

Ratio

hre

Small Signal Current Feedback

Ratio

hfe

Small Signal Output Admittance hoe

测试条件

Test Conditions

IC=10μA

IE=0

IC=1.0mA RBE=∞

IE=10μA

VCB=18V

VEB=2.0V

VCE=12V

IC=10mA

VCE=12V

VCE=12V

VCB=10V

f=1.0MHz

VCE=6.0V

f=1.0KHz

VCE=5.0V

f=270Hz

VCE=5.0V

f=270Hz

VCE=5.0V

f=270Hz

VCE=5.0V

f=270Hz

IC=0

IE=0

IC=0

IC=2.0mA

IB=1.0mA

IC=2.0mA

IC=2.0mA

IE=0

IC=0.1mA

Rg=500Ω

IC=0.1mA

IC=0.1mA

IC=0.1mA

IC=0.1mA

最小值 典型值 最大值

Min Typ Max

30

单位

Unit

V

30

V

5.0

0.5

0.5

100

500

0.2

0.67 0.75

230

1.8 3.5

V

μA

μA

V

V

MHz

pF

4.0 10

dB

16.5

70

KΩ

×10-6

130

11

μS

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