SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·High Breakdown Voltage-
: VCEO= 90V(Min)
·Wide Safe Operating Area
APPLICATIONS
·Designed for B/W TV horizontal deflection output applications.
·Suitable for horizontal output applications in 12~24 inch B/W
TV, and switching applications of 5A class.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCES
Collector-Emitter Voltage
200
V
VCEO
Collector-Emitter Voltage
90
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current- Continuous
7.5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC= 25℃
TJ
Junction Temperature
15
A
50
W
150
℃
Tstg
Storage Temperature Range
-65~150
℃
SPTECH website:www.superic-tech.com
2SC940
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