BF256B Ver la hoja de datos (PDF) - New Jersey Semiconductor

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componentes Descripción

Fabricante

BF256B

N-Channel RF Amplifiers

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Una.

TELEPHONE: (973) 376-2922

(212) 227-6005

FAX: (973) 376-8960

BF256A/BF256B/BF256C

N-Channel RF Amplifiers

• This device is designed for VHF/UHF amplifiers.

*'

• Sourced from process 50.

AbSOlUte Maximum Ratings Ta=25°C unless otherwise noted

Symbol

VDG

VGS

IGF

PD

TSTG

Parameter

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Total Device Dissipation @TA=25°C

Derate above 25°C

Operating and storage Temperature Range

1

TO-92

LGate 2. Source 3. Drain

Value

30

-30

10

350

2.8

-55 - 150

Units

V

V

mA

mW

mW/°C

°C

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Off Characteristics

V(8R)GSS

VGS

VGS(off)

Gate-Source Breakdown Voltage

Gate-Source

Gate-Source Cutoff Voltage

IGSS

Gate Reverse Current

On Characteristics

toss

Zero-Gate Voltage Drain Current

BF256A

BF256B

BF256C

Small Signal Characteristics

gfs

Common Source Forward Transconductance

Test Condition

VDS = 0. !G=1uA

VDS = 15V,lD = 200nA

VDS=15V, !D = 10nA

VGS = -20V, VGS = 0

VGS = 15V, VGS = 0

VDS = 15V, VGS = 0, f= 1KHz

Min. Max Unte

-30

V

-0.5 -7.5

V

-0.5

-8

V

-5

nA

3

7

mA

6

13

11

18

4.5

mmhos

N.I .Semi-Conductors reserves the right to change test conditions, parameter limit* .md package dimensions without notice

Inrbrmution lumished by NJ Semi-Conductors it believed to he hoth uccurnlc nml reliable ,H the linw of guing to press. However VI

Semi•(, iiiiJutlor* .bMiincs no resptiiuibility for ;my ermrs i'r uiniuiuiis discovered in its use NJ Semi-Condtuh.rs cn<;our:)«»

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