DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

MTD15N06VL-1 Ver la hoja de datos (PDF) - ON Semiconductor

Número de pieza
componentes Descripción
Fabricante
MTD15N06VL-1
ON-Semiconductor
ON Semiconductor ON-Semiconductor
MTD15N06VL-1 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
MTD15N06VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 5)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
(Cpk 2.0) (Note 5)
Static DraintoSource OnResistance
(VGS = 5.0 Vdc, ID = 7.5 Adc)
(Cpk 2.0) (Note 5)
DraintoSource OnVoltage
(VGS = 5.0 Vdc, ID = 15 Adc)
(VGS = 5.0 Vdc, ID = 7.5 Adc, TJ = 150°C)
Forward Transconductance (VDS = 8.0 Vdc, ID = 7.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 30 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc,
RG = 9.1 W)
Gate Charge
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 5.0 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(IS = 15 Adc, VGS = 0 Vdc)
(IS = 15 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
trr
Reverse Recovery Stored
Charge
(IS = 15 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
ta
tb
QRR
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
LD
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
LS
(Measured from the source lead 0.25from package to source bond pad)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
5. Reflects typical values.
Max limit Typ
Cpk =
3 x SIGMA
Min
Typ
Max
Unit
60
68
Vdc
mV/°C
mAdc
10
100
100
nAdc
Vdc
1.0
1.5
2.0
4.0
mV/°C
W
0.075 0.085
Vdc
1.5
1.3
8.0
10
mhos
570
880
pF
180
380
45
110
11
50
ns
150
210
27
160
70
140
12
20
nC
3.0
7.0
11
Vdc
0.96
1.6
0.85
63
ns
42
21
0.140
mC
nH
3.5
4.5
nH
7.5
http://onsemi.com
2

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]