4N32S Ver la hoja de datos (PDF) - Fairchild Semiconductor

Número de pieza

componentes Descripción

Fabricante

4N32S

General Purpose 6-Pin Photodarlington Optocoupler

Fairchild Semiconductor 

Electrical Characteristics (TA = 25°C Unless otherwise specified.)

Individual Component Characteristics

Symbol

Parameter

Test Conditions Min.

EMITTER

VF Input Forward Voltage*

IR

Reverse Leakage Current*

C Capacitance*

DETECTOR

IF = 10mA

–

VR = 3.0V

–

VF = 0V, f = 1.0MHz

–

BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0mA, IB = 0

30

BVCBO Collector-Base Breakdown Voltage* IC = 100µA, IE = 0

30

BVECO Emitter-Collector Breakdown Voltage* IE = 100µA, IB = 0

5.0

ICEO Collector-Emitter Dark Current*

VCE = 10V, Base Open

–

hFE DC Current Gain

VCE = 5.0V, IC = 500µA

–

Typ.

1.2

0.001

150

60

100

8

1

5000

Max.

1.5

100

–

–

–

–

100

–

Unit

V

µA

pF

V

V

V

nA

Transfer Characteristics

Symbol

Parameter

Test Conditions

DC CHARACTERISTICS

IC(CTR) Collector Output Current*(1, 2) IF = 10mA, VCE = 10V, IB = 0

4N32, 4N33

4N29, 4N30

VCE(SAT)

4N31

Saturation Voltage*(2)

4N29, 4N30, 4N32, 4N33

IF = 8mA, IC = 2.0mA

4N31

AC CHARACTERISTICS

ton

Turn-on Time

toff

Turn-off Time

4N32, 4N33

4N29, 4N30, 4N31

IF = 200mA, IC = 50mA,

VCC = 10V

IF = 200mA, IC = 50mA,

VCC = 10V

BW

Bandwidth(3, 4)

Min.

50 (500)

10 (100)

5 (50)

–

–

–

–

–

–

Typ.

–

–

–

–

–

–

–

–

30

Max. Unit

– mA (%)

–

–

1.0

V

1.2

5.0

µS

100

µS

40

–

kHz

Isolation Characteristics

Symbol

VISO

RISO

CISO

Characteristic

Input-Output Isolation Voltage(5)

4N29, 4N30, 4N31, 4N32, 4N33

4N32*

4N33*

Isolation Resistance(5)

Isolation Capacitance(5)

Test Conditions

II-O ≤ 1µA, Vrms, t = 1min.

VDC

VDC

VI-O = 500VDC

VI-O = Ø, f = 1MHz

Min. Typ. Max. Units

5300

2500

1500

–

–

–

–

–

1011

0.8

– Vac(rms)

–

V

–

–

Ω

–

pF

Notes:

* Indicates JEDEC registered data.

1. The current transfer ratio(IC/IF) is the ratio of the detector collector current to the LED input current with VCE @ 10V.

2. Pulse test: pulse width = 300µs, duty cycle ≤ 2.0% .

4. IF adjusted to IC = 2.0mA and IC = 0.7mA rms.

5. The frequency at which IC is 3dB down from the 1kHz value.

6. For this test, LED pins 1 and 2 are common, and phototransistor pins 4, 5 and 6 are common.

©2006 Fairchild Semiconductor Corporation

4N29, 4N30, 4N31, 4N32, 4N33 Rev. 1.0.1

3

www.fairchildsemi.com

Share Link: