2SB1057P Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SB1057P

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -0.7A

VBE(on) Base-Emitter On Voltage

IC= -7A; VCE= -5V

ICBO

Collector Cutoff Current

VCB= -150V; IE= 0

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

hFE-1

DC Current Gain

IC= -20mA; VCE= -5V

hFE-2

DC Current Gain

IC= -1A; VCE= -5V

hFE-3

DC Current Gain

IC= -7A; VCE= -5V

COB

Output Capacitance

IE= 0; VCE= -10V; ftest=1MHz

fT

Current-Gain—Bandwidth Product

IC=-0.5A; VCE= -10V

 hFE-2 Classifications

R

Q

P

40-80 60-120 100-200

2SB1057

MIN TYP. MAX UNIT

-150

V

-2.0 V

-1.8 V

-50 μA

-50 μA

20

40

200

20

450

pF

20

MHz

SPTECH website：www.superic-tech.com

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