B1186AE Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

B1186AE

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -160V(Min.)

·Good Linearity of hFE

·Complement to Type 2SD1763A

APPLICATIONS

·Power amplifier applications.

·Driver stage amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-160

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

ICM

Collector Current-Peak

Collector Power Dissipation

@ Ta=25℃

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-3

A

2

W

20

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SB1186A

SPTECH website：www.superic-tech.com

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