MBR1100 Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
MBR1100 Datasheet PDF : 4 Pages
| |||
MBR1100
Preferred Device
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
Features
• Low Reverse Current
• Low Stored Charge, Majority Carrier Conduction
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Stress Protection
• Low Forward Voltage
• 175°C Operating Junction Temperature
• High Surge Capacity
• These are Pb−Free Devices*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
100
V
VRWM
VR
Average Rectified Forward Current
IO
(VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W,
P.C. Board Mounting, [see Note 3], TA = 120°C)
1.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Operating and Storage Junction Temperature TJ, Tstg −65 to °C
Range (Note 1)
+175
Voltage Rate of Change (Rated VR)
dv/dt
10 V/ns
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
June, 2006 − Rev. 6
http://onsemi.com
SCHOTTKY
BARRIER RECTIFIER
1.0 AMPERE, 100 VOLTS
DO−41
AXIAL LEAD
CASE 59
STYLE 1
MARKING DIAGRAM
A
MBR1100
YYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MBR1100
MBR1100G
Axial Lead*
Axial Lead*
1000 Units/Bag
1000 Units/Bag
MBR1100RL
MBR1100RLG
Axial Lead* 5000/Tape & Reel
Axial Lead* 5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MBR1100/D
Share Link: 