MBR130 Ver la hoja de datos (PDF) - SUNMATE electronic Co., LTD
Número de pieza
componentes Descripción
Fabricante
MBR130 Datasheet PDF : 2 Pages
| |||
MBR120-MBR1100
SCHOTTKY BARRIER RECTIFIER DIODES
VOLTAGE RANGE: 20 - 100V
CURRENT: 1.0 A
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
Transient Protection
! High Current Capability
A
B
A
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
PInrvoetertcetriso,nFArepep lWicahteioenlisng, a n d P o larity D
C
Mechanical Data
! Case: DO-41, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.34 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
DO-41
Dim
Min
Max
A
25.40
¾
B
4.06
5.21
C
0.71
0.864
D
2.00
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol MBR120 MBR130 MBR140 MBR150 MBR160 MBR180 MBR1100 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
20
30
40
50
60
80
100
V
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
35
42
56
70
V
Average Rectified Output Current @TL = 100°C
(Note 1)
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
IFSM
40
A
(JEDEC Method)
Forward Voltage
@IF = 1.0A
VFM
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
IRM
0.50
0.70
0.5
10
0.85
V
mA
Typical Junction Capacitance (Note 2)
Cj
110
80
pF
Typical Thermal Resistance (Note 1)
RJL
RJA
15
50
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1 of 2
Share Link: 