2SC3838 Ver la hoja de datos (PDF) - Inchange Semiconductor
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2SC3838 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC3838
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CBO Collector-Base Breakdown Voltage
IC= 10μA ; IE= 0
20
V
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞
11
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10μA ; IC= 0
3
V
ICBO
Collector Cutoff Current
VCB= 10V; IE= 0
0.5 μA
IEBO
Emitter Cutoff Current
VEB= 2V; IC= 0
0.5 μA
VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ; IB= 5mA
0.5
V
hFE
DC Current Gain
IC= 5mA ; VCE= 10V
56
180
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 10V,f= 500MHz 1.4 3.2
GHz
COB
Output Capacitance
IE= 0 ; VCB= 10V;f= 1.0MHz
0.8 1.5 pF
rbb’ • CC Base Time Constant
NF
Noise Figure
IC= 10mA; VCB= 10V;f= 31.8MHz
IC= 2mA ; VCE= 6V;f= 500MHz;
Rg= 50Ω
4
12
ps
3.5
dB
isc website：www.iscsemi.cn
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