2SC3834F Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

2SC3834F

Silicon NPN transistor in a TO-220F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SC3834F

Rev.E Mar.-2016

DATA SHEET

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC (Tc=25℃)

Tj

Tstg

数值

Rating

200

120

8.0

7.0

3.0

40

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Collector output capacitance

符号

Symbol

测试条件

Test Conditions

VCEO IC=50mA IE=0

ICBO VCB=200V IE=0

IEBO VEB=8.0V IE=0

hFE VCE=4.0V IC=3.0A

VCE(sat) IC=3.0A

IB=0.3A

VBE(sat)

fT

Cob

IC=3.0A

VCE=12V

VCB=10V

IB=0.3A

IE=-0.5A

f=1.0MHz

最小值 典型值 最大值 单位

Min Typ Max Unit

120

V

100 μA

100 μA

70

220

0.5 V

1.2 V

30

MHz

110

pF

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