2SC3834 Ver la hoja de datos (PDF) - Thinki Semiconductor Co., Ltd.
Número de pieza
componentes Descripción
Fabricante
2SC3834 Datasheet PDF : 2 Pages
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2SC3834
2SC3834
Pb
Pb Free Plating Product
50 Watt NPN Triple Diffused Planar Silicon Transistor
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 0.5V(Max)@ IC=3A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min)
·Good Linearity of hFE
·Humidifier,DC-DC converter and general purpose.
Collector
Base
Emitter
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
E
C
B
Fig.1 simplified outline (TO-220C) and symbol
ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Base Current
IB
Collector Current (PULSE)
Ic
Collector Power Dissipation( Tc=25°C )
Pc
Junction Temperature
Tj
Storage Temperature
TSTG
RATING
200
120
8
3
7
50
150
-55 ~ +150
UNIT
V
V
V
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Emitter Breakdown Voltage BVCEO Ic= 50mA
120
Collector Cut-Off Current
ICBO VCB=200V, IE=0
Emitter Cut-Off Current
IEBO VEB= 8V, Ic =0
DC Current Transfer Ratio
hFE
VCE= 4V,Ic= 3A
70
Collector-Emitter Saturation Voltage VCE(sat) Ic=3A ,IB=0.3A
Base-Emitter Saturation Voltage
VBE(sat) Ic=3A ,IB=0.3A
Transition Frequency
fT
VCE=12V,IE=-0.5mA,f=100MHz
Output Capacitance
Cob VCB= 10V, IE= 0 A,f=1MHz
TYP
30
110
MAX
100
100
220
0.5
1.2
UNIT
V
μA
μA
V
V
MHz
pF
TYPE SWITCHING CHARACTERISTCS (Common Emitter)
Vcc(V) RL(Ω)
Ic (A) VBB1(V) VBB2(V) IB1(A) IB2(A)
50
16.7
3
10
-5
0.3
-0.6
Ton(μA) Tstg(μA) Tf (μA)
0.5(max) 3.0(max) 0.5(max)
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
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