2SC3832 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

2SC3832

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

2SC3832

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A

VBE(sat) Base-Emitter Saturation Voltage

IC= 3A; IB= 0.6A

ICBO

Collector Cutoff Current

VCB= 500V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 10V; IC= 0

hFE

DC Current Gain

IC= 3A; VCE= 4V

fT

Current-Gain—Bandwidth Product

IE= -0.5A; VCE= 12V

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 1.0MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= 3A; IB1=0.3A; IB2= -0.6A;

RL= 66.7Ω; VCC= 200V

MIN TYP. MAX UNIT

400

V

0.5

V

1.3

V

100 μA

100 μA

10

30

10

MHz

50

pF

1.0 μs

3.0 μs

0.5 μs

SPTECH website：www.superic-tech.com

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