2SC3832 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Fabricante

2SC3832

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Low Collector Saturation Voltage

: VCE(sat)= 0.5V(Max)@ IC= 3A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 500V (Min)

·High Switching Speed

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Pulse

14

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

2

A

50

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

2SC3832

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