2SC3835Y Ver la hoja de datos (PDF) - Tiger Electronic
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2SC3835Y Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Silicon NPN Switching Ttransistors
Product specification
2SC3835Y
DESCRIPTION
The is an epitaxial pianar type NPN
silicon transistor
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
200 V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
110 V
8.0 V
7.0 A
3.0 A
60 W
150 oC
-55~150 oC
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICEO VCB=100V, IE=0
Emitter Cut-off Current
IEBO VEB=8.0V, IC=0
Collector-Emitter Sustaining Voltage VCEO IC=1.0mA, IB=0
DC Current Gain
hFE(1) VCE=4V, IC=3.0A
hFE(2) VCE=5V, IC=1.0A
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat) IC=3.0A,IB=300mA
VBE(sat) IC=3.0A,IB=300mA
Current Gain Bandwidth Product
fT
VCE=12V,IC=500mA
Min. Typ. Max. Unit
—
—
0.1 mA
—
—
0.1 mA
110 —
—
V
70
—
—
100 — 200
—
—
0.5 V
—
—
1.2 V
—
30
— MHz
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