A966 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD

Número de pieza

componentes Descripción

Fabricante

A966

TRANSISTOR (PNP)

SHENZHEN YONGERJIA INDUSTRY CO.,LTD 

RoHS

2SA966

2SA966 TRANSISTOR (PNP)

D FEATURE

Power dissipation

T PCM : 0.9 W(Tamb=25℃)

.,L Collector current

ICM : -1.5 A

Collector-base voltage

O V(BR)CBO : -30 V

Operating and storage junction temperature range

C TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

IC ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

N Parameter

Symbol

Test conditions

MIN

O Collector-base breakdown voltage

V(BR)CBO

Ic= -1mA , IE=0

-30

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10 mA , IB=0

-30

R Emitter-base breakdown voltage

V(BR)EBO

IE= -1mA, IC=0

-5

T Collector cut-off current

ICBO

VCB= -30 V , IE=0

C Emitter cut-off current

IEBO

VEB= -5V , IC=0

E DC current gain

hFE(1)

VCE=-2 V, IC= -500mA

100

L Collector-emitter saturation voltage

VCE(sat)

IC= -1.5 A, IB= -0.03A

E Base-emitter voltage

VBE

IC= -500 mA, VCE= -2V

J Transition frequency

fT

VCE= -2 V, IC= -500mA

100

MAX

-0.1

-0.1

320

-2

-1

ECLASSIFICATION OF hFE(1)

WRank

O

Y

UNIT

V

V

V

µA

µA

V

V

MHz

Range

100-200

160-320

WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com

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