A966 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

A966

Silicon PNP transistor in a TO-92LM Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA966

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Emitter Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IE

PC

Tj

Tstg

DATA SHEET

数值

Rating

-30

-30

-5.0

-1.5

1.5

900

150

-55～150

单位

Unit

V

V

V

A

A

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Voltage

Transition Frequency

Collector output capacitance

符号

Symbol

测试条件

Test Conditions

VCEO IC=-10mA IB=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-30

V

VEBO IE=-1.0mA IC=0

-5.0

V

ICBO VCB=-30V IE=0

IEBO VEB=-5.0V IC=0

hFE VCE=-2.0V IC=-500mA 100

-0.1 μA

-0.1 μA

320

VCE(sat) IC=-1.5A

IB=-30mA

-2.0 V

VBE VCE=-2.0V IC=-500mA

fT VCE=-2.0V IC=-500mA

Cob

VCB=-10V

f=1.0MHz

IE=0

-1.0 V

120

MHz

30 pF

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