BT136X-600E Ver la hoja de datos (PDF) - WeEn Semiconductors

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BT136X-600E

4Q Triac

WeEn Semiconductors 

WeEn Semiconductors

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

VDRM

repetitive peak off-state

voltage

IT(RMS)

RMS on-state current

full sine wave; Th ≤ 92 °C;

Fig 1; Fig 2; Fig 3

ITSM

non-repetitive peak on-

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

state current

Fig 4; Fig 5

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms

I2t

I2t for fusing

tP = 10 ms; SIN

dIT/dt

rate of rise of on-state

current

IG = 20 mA; T2+ G+

IG = 20 mA; T2+ G-

IG = 20 mA; T2- G-

IG = 50 mA; T2- G+

IGM

peak gate current

PGM

peak gate power

PG(AV)

average gate power

over any 20 ms period

Tstg

storage temperature

Tj

junction temperature

BT136X-600E

4Q Triac

Values

600

4

25

27

3.1

50

50

50

10

2

5

0.5

-40 to 150

125

Unit

V

A

A

A

A2s

A/μs

A/μs

A/μs

A/μs

A

W

W

°C

°C

f = 50 Hz; Th = 92 °C

Fig. 1. RMS on-state current as a function of surge

duration; maximum values

Fig. 2. RMS on-state current as a function of heatsink

temperature; maximum values

BT136X-600E

Product data sheet

All information provided in this document is subject to legal disclaimers.

17 April 2018

© WeEn Semiconductors Co., Ltd. 2018. All rights reserved

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