C3152 Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

Número de pieza

componentes Descripción

Fabricante

C3152

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 800V(Min)

·Fast Switching Speed

·Wide Area of Safe Operation

APPLICATIONS

·Switching regulator and high voltage switching applications

·High speed DC-DC converter applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

900

V

VCEO

Collector-Emitter Voltage

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

10

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1.5

A

80

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SC3152

SPTECH website：www.superic-tech.com

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