MCR100-8 Ver la hoja de datos (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
Número de pieza
componentes Descripción
Fabricante
MCR100-8 Datasheet PDF : 2 Pages
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RoHS
MCR100-6/100-8
WEJ ELECTRONIC CO.,LTD MCR 100- 6, - 8 Silicon Planar PNPN Thyristor
TO-92
1. KATHODE
FEATURES
2. GATE
Current-IGT:
200
µA
ITRMS:
VDRM:
0.8
MCR100-6:
MCR100-8:
A
400 V
600 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
3. ANODE
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
123
Parameter
Symbol
Test conditions
MIN
MAX
On state voltage *
VTM
ITM=1A
1.7
Gate trigger voltage
Peak Repetitive forward and reverse
blocking voltage
MCR100-6
MCR100-8
Peak forward or reverse blocking
Current
Holding current
VGT
VDRM
AND
VRRM
IDRM
IRRM
IH
VAK=7V
0.8
IDRM= 10 µA ,VMAX=1010 V
400
600
VAK= Rated
10
VDRM or VRRM
IHL= 20 mA , Av = 7 V
5
A2
5
15
Gate trigger current
A1
IGT
A
VAK=7V
15
30
30
80
UNIT
V
V
V
µA
mA
µA
µA
µA
B
80
200
µA
* Forward current applied for 1 ms maximum duration, duty cycle≤1%.
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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