2SC2883 Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

Número de pieza

componentes Descripción

Fabricante

2SC2883

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• Low voltage

Maximum Ratings (Ta=25

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power dissipation

Junction Temperature

Storage Temperature

unless otherwise noted)

Symbol

Value

VCBO

30

VCEO

30

VEBO

5

IC

1.5

PC

0.5

TJ

150

Tstg

-55to +150

Unit

V

V

V

A

W

ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

VCBO

IC=1mA,IE=0

Collector-emitter breakdown voltage

VCEO

IC=10mA,IB=0

Emitter-base breakdown voltage

VEBO

IE=1mA,IC=0

Collector cut-off current

ICBO

VCB=30V,IE=0

Emitter cut-off current

IEBO

VEB=5V,IC=0

DC current gain

hFE

VCE=2V,IC=0.5A

Collector-emitter saturation voltage

VCE(sat) IC=1.5A,IB=30mA

Base-emitter voltage

VBE VCE=2V,IC=0.5A

Transition frequency

fT

VCE=2V,IC=500mA

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

CLASSIFICATION OF hFE

Rank

Range

Marking

O

100-200

GO

2SC2883 (NPN)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

Min Typ Max Unit

30

V

30

V

5

V

0.1

μA

0.1

μA

100

320

2

V

1

V

120

MHz

40

pF

Y

160-320

GY

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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