2N7002K Ver la hoja de datos (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Número de pieza

componentes Descripción

Fabricante

2N7002K

N-Channel Enhancement MOSFET

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

2N7002K

2.5

2

V GS = 10V

Pulsed

1.5

ID = 300mA

I D = 150mA

1

0.5

0

-75 -50 -25 0 25 50 75 100 125 150

Tch, CHANNEL TEMPERATURE ( C) °

Fig. 7 Static Drain-Source On-State Resistance

vs. Channel Tem perature

1

V GS = 10V

0.1

T A= 25°C

Pulsed

0.01

V GS = 0V

0.001

0

0.5

1

V SD , SOURCE-DRAIN VOLTAGE (V)

Fig. 9 Reverse Drain Current

vs. Source-Drain Voltage

1

V GS = 0V

Pulsed

T A = 150 ° C

0.1

T A = 125°C

T A = 85°C

T A = 25°C

0.01

0.001

0

T A = -55°C

T A = 0°C

T A = -25°C

0.5

1

1.5

V SD , SOURCE-DRAIN VOLTAGE (V)

Fig. 8 Reverse Drain Current

vs. Source-Drain Voltage

1

V GS = 10V

Pulsed

0.1

T A = 25°C

T A = -55°C

T A = 150°C

0.01

T A = 85 °C

0.001

0.001

0.01

0.1

1

ID , DRAIN CURRENT (A)

Fig.10 Forward Transfer Admittance

vs. Drain Current

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