2N7002K Ver la hoja de datos (PDF) - DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

Número de pieza

componentes Descripción

Fabricante

2N7002K

N-Channel Enhancement MOSFET

DONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 

2N7002K

Typical Characteristics

1.4

1.2

1.0

V GS = 10V

8V

6V

5V

4V

3V

0.8

0.6

10V

8V

6V

5V

4V

0.4

0.2

0

0

3V

1

2

3

4

5

V DS ,DRAIN-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

2

1.5

V DS = 10V

ID = 1mA

Pulsed

1

0.5

0

-50 -25 0 25 50 75 100 125 150

T ch, CHANNEL TEMPERATURE (°C)

Fig. 3 Gate Threshold Voltage

vs. Channel Tem perature

10

T A = 150°C

T A = 125°C

V GS = 5V

Pulsed

T A = 85°C

1

T A = -55 °C

T A = 25°C T A = 0°C T A = -25°C

0.1

0.001

0.01

0.1

1

ID , DRAIN CURRENT (A)

Fig. 5 Static Drain-Source On-Resistance

vs. Drain Current

1.00

V DS = 10V

Pulsed

T A = 125°C

0.10

T A = 75°C

T A = 25°C

0.01

1

T A = -25°C

1.5 2 2.5 3 3.5 4 4.5 5

V GS , GATE-SOURCE VOLTAGE (V)

Fig. 2 Typical Transfer Characteristics

10

V GS = 10V

Pulsed

T A = 125°C

T A = 150°C

T A = 85°C

1

T A = 25°C

T A = 0°C

T A = -55°C

T A = -25°C

0.1

0.001

0.01

0.1

1

ID, DRAIN CURRENT (A)

Fig. 4 Static Drain-Source On-Resistance

Vs. Drain Current

7

6

ID = 300mA

5

T A = 25°C

Pulsed

4

3

2

ID = 150mA

1

0

0 2 4 6 8 10 12 14 16 18 20

V GS, GATE SOURCE VOLTAGE (V)

Fig. 6 Static Drain-Source On-Resistance

vs. Gate-Source Voltage

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