2N7002K Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
Número de pieza
componentes Descripción
Fabricante
2N7002K Datasheet PDF : 5 Pages
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Plastic-Encapsulate Mosfets
2N7002K Typical Characteristics
10
RDSon
(Ω)
8
6
4
2
VGS = 3.5 V
03an71
Tj = 25 °C
4V
4.5 V
6V
10 V
2.4
a
1.8
1.2
0.6
03aa28
0
0
0.1
0.2
0.3
0.4
0.5
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (°C)
a = --------R---D----S---o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
2.4
VGS(th)
(V)
1.8
1.2
0.6
03aa34
typ
min
10-1
ID
(A)
10-2
10-3
10-4
10-5
03aa37
min
typ
0
-60
0
60
120 Tj (°C) 180
10-6
0
0.6
1.2
1.8
2.4
VGS (V)
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Tj = 25 °C; VDS = 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P5 -P4
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