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2N7002K

N-Channel Enhancement Mode Field Effect Transistor

Yangzhou yangjie electronic co., Ltd 

2N7002K

RoHS

COMPLIANT

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● VDS

60V

● ID

● RDS(ON)( at VGS=10V)

● RDS(ON)( at VGS=4.5V)

340mA

＜2.5ohm

＜3.0ohm

● ESD Protected Up to 2.5KV (HBM)

General Description

● Trench Power MV MOSFET technology

● Voltage controlled small signal switch

● Low input Capacitance

● Fast Switching Speed

● Low Input / Output Leakage

Applications

● Battery operated systems

● Solid-state relays

● Direct logic-level interface：TTL/CMOS

■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-source Voltage

VDS

60

V

Gate-source Voltage

VGS

TA=25℃ @ Steady State

Drain Current

TA=70℃ @ Steady State

ID

Pulsed Drain Current A

IDM

±20

V

340

mA

272

1.5

A

Total Power Dissipation @ TA=25℃

PD

350

mW

Thermal Resistance Junction-to-Ambient @ Steady State B

RθJA

357

℃/ W

Junction and Storage Temperature Range

TJ ,TSTG

-55～+150

℃

■ Ordering Information (Example)

PREFERED P/N

PACKING

CODE

Marking

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY MODE

2N7002K

F2

72K.

3000

30000

120000

7“ reel

S-S1396

Rev.2.0,25-Dec-18

1/6

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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