2SD1585M Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2SD1585M

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·High Collector Current:: IC= 3A

·Low Collector Saturation Voltage

: VCE(sat)= 1.5V(Max)@IC= 2A

·Complement to Type 2SB1094

APPLICATIONS

·Designed for power supplies or a variety of drives in audio

and other equipment.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

60

V

VCEO Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

5

A

IB

Base Current-Continuous

Total Power Dissipation

@ Ta=25℃

PC

Total Power Dissipation

@ TC=25℃

TJ

Junction Temperature

0.6

A

2

W

15

150

℃

Tstg

Storage Temperature Range

-55~150

℃

SPTECH website：www.superic-tech.com

2SD1585

1

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