MJE13005DP5 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Fabricante

MJE13005DP5

Silicon NPN transistor in a TO-126(R) Plastic Packag

Foshan Blue Rocket Electronics Co.,Ltd. 

MJE13005DP5

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

PC(TC=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

700

400

9.0

2.5

1.25

50

150

-55～150

单位

Unit

V

V

V

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=1mA

IE=0

VCEO IC=10mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=1mA

IC=0

Collector Cut-Off Current

ICBO VCB=700V IE=0

Collector cut-off current

ICEO VCE=400V IB=0

Emitter Base Cut-Off Current

IEBO VEB=9.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=5.0V

VCE(sat) IC=2.0A

IC=0.5A

IB=0.5A

Base to Emitter Saturation Voltage

Transition Frequency

VBE(sat)

fT

IC=2.0A

VCE=10V

f=1.0MHz

IB=0.5A

IC=0.2A

Fall time

Storage time

tf

VCE=5V

IC=0.5A

ts (UI9600)

最小值 典型值 最大值 单位

Min Typ Max Unit

700

V

400

V

9.0

V

0.1 mA

0.1 mA

0.1 mA

10

40

1.0 V

1.5 V

5.0

MHz

0.8 μs

5.0 μs

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