BU208A Ver la hoja de datos (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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BU208A Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
BU208A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2A
ICES
Collector Cutoff Current
VCE= 1500V; VBE= 0
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
hFE 1
DC Current Gain
IC= 1A; VCE= 5V
hFE
DC Current Gain
IC= 4.5A; VCE= 5V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 1MHz
tf
Fall Time
IC= 4.5A; IB= 1.8A; LB= 10μH
MIN TYP. MAX UNIT
700
V
1.0
V
1.5
V
1.0 mA
10 mA
8
2.25
125
pF
4
MHz
1.0
μs
SPTECH website：www.superic-tech.com
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