2SK531 Ver la hoja de datos (PDF) - Inchange Semiconductor

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2SK531

N-Channel MOSFET Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc N-Channel Mosfet Transistor

isc Product Specification

2SK531

·ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA

VGS(TH) Gate Threshold Voltage

VDS= 10V; ID= 1mA

RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=3A

VDS(ON) Drain-Source Saturation Voltage

IGSS

Gate Source Leakage Current

IF= 8A; VGS=10V

VGS= ±20V; VDS= 0

IDSS

Zero Gate Voltage Drain Current

VDS=450V; VGS= 0

tr

Rise time

ton

Turn-on time

tf

Fall time

VGS=10V;ID=2A;

RL=50Ω

toff

Turn-off time

MIN TYP. MAX UNIT

450

V

1.5

3.5

V

1.1 1.6

Ω

12

22

V

±100 nA

1

mA

25

50

ns

40

80

ns

35

70

ns

140 280 ns

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