CJ2306 Ver la hoja de datos (PDF) - Nanjing International Group Co

Número de pieza

componentes Descripción

Fabricante

CJ2306

SOT-23 Plastic-Encapsulate MOSFETS

Nanjing International Group Co 

MOSFET ELECTRICAL CHARACTERISTICS

Ta=25 ℃ unless otherwise specified

Parameter

Symbol

Test Condition

Static

Drain-Source Breakdown Voltage

V(BR)DS VGS = 0V, ID =250µA

Gate-Threshold Voltage

Gate-Body Leakage

VGS(th)

IGSS

VDS =VGS, ID =250µA

VDS =0V, VGS =±20V

Zero Gate Voltage Drain Current

IDSS

VDS =30V, VGS =0V

Drain-Source On-Resistancea

Forward Transconductancea

RDS(on)

gfs

VGS =10V, ID =3.5A

VGS =4.5V, ID =2.8A

VDS =4.5V, ID =2.5A

Diode Forward Voltage

VSD IS=1.25A,VGS=0V

Dynamic

Gate Charge

Qg

VDS =15V,VGS =5V,ID =2.5A

Total Gate Charge

Qgt

Gate-Source Charge

Qgs VDS =15V,VGS =10V,ID =2.5A

Gate-Drain Charge

Qgd

Gate Resistance

Rg

f =1.0MHz

Input Capacitance

Ciss

Output Capacitance

Coss VDS =15V,VGS =0V,f =1MHz

Reverse Transfer Capacitance

Crss

Switching

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

td(on)

tr

td(off)

tf

VDD=15V,

RL=15Ω, ID ≈1A,

VGEN=10V,Rg=6Ω

Notes :

a.Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

Min Typ Max Unit

30

V

1.0

3.0

±100 nA

0.5

µA

0.038 0.047

Ω

0.052 0.065

7.0

S

0.8 1.2

V

3.0

4.5

6

9

nC

1.6

0.6

2.5

5

7.5

Ω

305

65

pF

29

7

11

12

18

ns

14

25

6

10

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