BUX41 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
BUX41 Datasheet PDF : 2 Pages
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THERMAL DATA
Rthj-c
Thermal Resistance Junction-case
Max
1.46
°C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICEO Collector Cut-off
Current (la = 0)
VCE = 160 V
ICEX Collector Cut-off
Current
VCE = 250 V
Tease = 125 °C
VCE= 250 V
VBE = - 1 5 V
VBE = -1.5V
IEBO
VcEO(sus)*
Emitter Cut-off Current
(Ic- 0)
Collector-Emitter
Sustaining Voltage
VEB = 5 V
Ic = 200 mA
VEBO
Emitter-Base Voltage
(lc = 0)
IE = 50 mA
VcE(sat)* Collector-Emitter
Saturation Voltage
Ic = 5 A
Ic = 8 A
IB * 0.5 A
IB = 1 A
VBE(sat)* Base-Emitter
Saturation Voltage
Ic = 8 A
la = 1 A
HFE* DC Current Gain
Ic = 5 A
Ic = 8 A
VCE = 4 V
VCE = 4 V
Is/b
Second Breakdown
Collector Current
VCE = 30 V
VCE = 135 V
t = 1s
t = 1s
IT
Transistor Frequency Vce = 15 V
f = 10 MHz
Ic = 1 A
ton
Turn-on Time
lc = 8 A
Vcc = 150 V
IB1 = 1 A
ts
Storage Time
tf
Fall Time
Ic = 8 A
IBZ = - 1 A
IBI = 1 A
Vcc = 150V
Clamped Es/o
Collector Current
Volamp= 200 V
L = 500 pH
* Pulsed: Pulse duration = 300ns, duty cycle < 2 %
Min.
200
7
15
8
4
0.15
8
8
Typ.
0.38
0.6
1.35
0.28
1.2
0.25
Max.
1
Unit
mA
1
mA
5
mA
1
mA
V
V
1.2
V
1.6
V
2
V
45
A
A
MHz
1
jis
1.7
|ilS
0.8
US
^A
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