CY20AAJ-8H Ver la hoja de datos (PDF) - Renesas Electronics

Número de pieza

componentes Descripción

Fabricante

CY20AAJ-8H

Nch IGBT for Strobe Flasher

Renesas Electronics 

CY20AAJ-8H

Application Example

IXe

Vtrig

CM

+

–

VCM

Trigger Signal Vtrig

RG

VCE

30Ω

VG

IGBT

IGBT

VG

Gate Voltage

VCM

ICP

CM

VGE

Recommended Operation

Conditions

330 V

120 A

330 µF

5V

Maximum Operation

Conditions

350 V

130 A

400 µF

—

Xe Tube Current IXe

Precautions on Usage

1. IGBT has MOS structure and its gate is insulated by thin silicon oxide. So please handle carefully to protect the

device from electrostatic charge.

2. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And

peak reverse gate current during turn-off must become less than 0.1 A. (In general, when RG (off) = 30 Ω, it is

satisfied.)

3. The operation life should be endured 5,000 shots under the charge current (IXe ≤ 130 A : full luminescence

condition) of main capacitor (CM = 400 µF) which can endure repeated discharge of 5,000 times. Repetition period

under full luminescence condition is over 3 seconds.

4. Total operation hours applied to the gate-emitter voltage must be within 5,000 hours when VGE is driven at 6 V.

Rev.2.00, Nov 29, 2005, page 3 of 4

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