8050 Ver la hoja de datos (PDF) - Inchange Semiconductor

Número de pieza

componentes Descripción

Fabricante

8050

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

8050

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVCBO

Collector-Base Breakdown Voltage

IC= 0.1mA ; IE= 0

BVCEO

Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0

BVEBO

Emitter-Base Breakdown Voltage

IE= 0.1mA ; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.08A

VBE(sat) Base-Emitter Saturation Voltage

IC= 0.8A; IB= 0.08A

ICBO

Collector Cutoff Current

VCB= 40V ; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

HFE-1

DC Current Gain

IC= 100mA ; VCE= 1V

hFE-2

DC Current Gain

IC= 800mA ; VCE= 1V

MIN TYP. MAX UNIT

40

V

25

V

5

V

0.5

V

1.2

V

0.1 μA

0.1 μA

120

400

40

Classification of hFE

Rank

Range

L

120-200

H

144-202

J

300-400

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