isc Silicon NPN Power Transistor
DESCRIPTION
·With SOT-23 packaging
·High collector-base voltage
·Low saturation voltage
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Audio output stage and converters/inverters circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
INCHANGE Semiconductor
8050
VALUE UNIT
40
V
25
V
5
V
1.5
A
0.3
W
150
℃
-55~150 ℃
isc website:www.iscsemi.com
isc & iscsemi is registered trademark