2SC2502 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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Fabricante
2SC2502 Datasheet PDF : 2 Pages
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([EIIEU ^smi-donduetoi iJ^ioducU, One,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2502
\\N
• Collector-Emitter Sustaining Voltage-
: VCEO(susr 400V(Min)
• Fast Switching Speed
• Collector-Emitter Saturation Voltage-
: VCE(satr 0.7V(Max.)@ lc= 3A
APPLICATIONS
• Designed for use in high-voltage, high-speed , power
switching in inductive circuit, they are particularly suited
for 115 and 220V switchmode applications such as swit-
ching regulator's, inverters.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
VCBO Collector-Base Voltage
500
VCEO Collector-Emitter Voltage
400
VEBO
Emitter-Base Voltage
7
Ic
Collector Current-Continuous
6
ICM
Collector Current-Peak
12
IB
Base Current-Continuous
2
Collector Power Dissipation
PC
@ Tc=25r
50
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55-150
UNIT
V'
V
V
A
A
A
W
'C
"C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.5 r/w
<1 -
\i
PIN 1. BASE
i. COLLECT OR
S.ftdlTTER
TO-220C package
« B P.
*S
r^ery T
liQ
Ui
•« V '»! ,,,-F
i -i I 1
1H
L
1
K
D
1
V
Hc
1_
c~|
-j
-L..j
-
mm
DEM MM MAX
A 15.50 15.90
B 9.90 10.20
r 4.20 i.50
D 0.70 0.90
F 3.40 3,70
G 4.98 5.18
H 2,68 2.90
j 0.44 o.ao
K 13.00 13.40
L 1.20 1>43
Q 2.70 2.90
R 2.30 2.70
S 1.29 1,35
U 6.45 (5.65
V 8.66 8.(»>
N.I Soini-Coijiluctors reserves the right lo change test conditions, parameter limits and package dimensions without
notiee. Intbrmation liirnished hy N.I Seini-Conductors is helievcd to he both aceurate and reliable at ilie time ol'coin
In press. I louever, N.I Seini-ConJuetors assumes no responsibilil\r any errors or omissions discovered in its use.
N.I Semi-Condiielors enauira.ues customers to \ e r i t y that datasheets are current before placing orders.
Quali^y Semi-Conductors
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