2SB554 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2SB554 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc=30mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
lE=1m'A;lc=0
VcE(sat) Collector-Emitter Saturation Voltage lc=10A; IB=1A
VBE(OH) Base-Emitter On Voltage
lc=10A;VCE=5V
ICBO
Collector Cutoff Current
VCB= 90V; le= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hFE
DC Current Gain
lc= 2A ; VCE= 5V
fr
Current-Gain—Bandwidth Product
lc= 2A ; VCE= 5V
COB
Output Capacitance
lE=0;VcB=10V;f=1MHz
• hFE.2 Classifications
R
0
40-80
70-140
2SB554
MIN TYP. MAX UNIT
-180
V
-5
V
-3.0
V
-2.5
V
-0.1 mA
-0.1 mA
40
140
5
MHz
300
PF
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